Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy

被引:23
作者
Jalan, Bharat [1 ]
Cagnon, Joel [1 ]
Mates, Thomas E. [1 ]
Stemmer, Susanne [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 06期
基金
美国国家科学基金会;
关键词
OXIDE SUPERCONDUCTING FILMS; THIN-FILMS; INTERFACE; MBE;
D O I
10.1116/1.3253355
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO(3) films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (> 800 degrees C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO(3) substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3253355]
引用
收藏
页码:1365 / 1368
页数:4
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