Technological issues for high-density MRAM development

被引：14
|
作者：
Kim, T
Kim, YK
Park, W
机构：
[1] Samsung Adv Inst Technol, Mat & Dev Lab, Suwon 440600, South Korea
[2] Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 282卷
关键词：
magnetoresistive random access memory; magnetic tunnel junction; magnetoreistance;
D O I：
10.1016/j.jmmm.2004.04.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：232 / 236
页数：5
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