Characteristics of high brightness InGaN-based white light emitting diodes

被引：0

作者：

Li, ZH ^{[1
]}

Ding, XM

Yang, ZJ

Yu, TJ

Zhang, GY

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Res Ctr Wide Band Gap Semicond, Beijing 100871, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2002年 / 21卷 / 05期

关键词：

light source; InGaN; YAG; white-LEDs;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High brightness white light emitting diodes(Phi3) were fabricated by using the self-produced InGaN/GaN blue LED chip and YAG: Ce3+ fluorescence. The luminous intensity, chromaticity coordinate, I-V, color temperature and color rendering index were studied. The experiment result shows that in room temperature, at forward current 20mA, luminous intensity of the white LED is from 1.1cd to 2.3cd, when forward current is under 3.5V, the chromaticity coordinate is (0.28, 0.34), and the color rendering index is about 70.

引用

页码：390 / 392

页数：3

共 6 条

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