XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors

被引：18

作者：

Perego, M. ^{[1
]}

Seguini, G. ^{[1
]}

Fanciulli, M. ^{[1
,2
]}

机构：

[1] INFM, CNR, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 5-6期

关键词：

Hafnium oxide; Band alignment; Germanium; Gallium arsenide; XPS; IPE;

D O I：

10.1016/j.mssp.2008.10.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO2 thin films and n-type Ge(100) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate removal of the artefacts induced by differential charging phenomena occurring during XPS measurement. VBO values are 2.7 +/- 0.1 eV for all samples independent of the different growth conditions. A conduction band offset (CBO) of 2.0 +/- 0.1 eV and a band gap of 5.6 +/- 0.1 eV have been obtained by internal photoemission (IPE) and photoconductivity measurements, respectively. VBO and CBO values obtained by the different techniques are in excellent agreement within the experimental error. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：221 / 225

页数：5

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