Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer

被引：24

作者：

Ahn, Yoonho ^{[1
]}

Son, Jong Yeog ^{[2
,3
]}

机构：

[1] Korea Univ Technol & Educ, Sch Liberal Arts, Cheonan 31253, South Korea

[2] Kyung Hee Univ, Dept Appl Phys, Yongin 17104, South Korea

[3] Kyung Hee Univ, Inst Nat Sci, Yongin 17104, South Korea

来源：

CERAMICS INTERNATIONAL | 2021年 / 47卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Resistive random access memory; NiO thin Film; Oxygen-deficient layer; Conducting filament; Forming voltage; SET/RESET voltage; RRAM;

D O I：

10.1016/j.ceramint.2020.12.064

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Herein, we characterize resistive random access memory (RRAM) devices containing an oxygen-deficient layer. The RRAM devices consist of multiple layered NiO thin films that consist of an oxygen-deficient NiO0.95 layer, within a NiO/NiO0.95/NiO layer structure. The NiO thin-film layers were deposited on Pt/Ta/SiO2/Si substrates by radio frequency magnetron sputtering. The stoichiometry and thickness of the NiO triple-layer thin films were determined by Auger electron spectroscopy. We fabricated RRAM capacitors with a structure of Pt/NiO/NiO0.95/NiO/Pt to investigate the resistive switching characteristics. The presence of an oxygen-deficient layer significantly lowers the forming and SET/RESET voltages compared to a Pt/NiO/Pt RRAM capacitor. This reduces the energy required to form conducting filaments in the oxygen-deficient layer. Moreover, the forming and SET/RESET voltages exhibit reduced dispersion due to the relatively high oxygen vacancy density in the oxygen-deficient NiO0.95 layer.

引用

页码：9342 / 9346

页数：5

共 37 条

[1] Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films [J].