Measurement of the shot noise in a single-electron transistor

被引：19

作者：

Kafanov, S. ^{[1
]}

Delsing, P. ^{[1
]}

机构：

[1] Chalmers, S-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 15期

关键词：

CHARGE SENSITIVITY; COULOMB-BLOCKADE; TUNNEL-JUNCTIONS; HANBURY-BROWN; QUANTUM-NOISE; SUPPRESSION; OSCILLATIONS; LIMIT;

D O I：

10.1103/PhysRevB.80.155320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

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页数：5

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