The effect of high hydrostatic pressure up to 12 kbar on the electrical resistivity in the basal ab plane of an optimally doped Y0.77Pr0.23Ba2Cu3O7-delta single crystal was studied. An inhomogeneity of the sample is found that does not depend on the applied pressure, P. The T-c(P) dependence increases nonlinearly with increasing P, and the value of the baric derivative, dT(c)/dP, decreases. Possible mechanisms of the effect of high pressure on T-c are discussed, taking into account the presence of features in the electronic spectrum of charge carriers.