Experimental demonstration of GaN IMPATT diode at X-band

被引：20
|
作者：
Kawasaki, Seiya [1 ]
Ando, Yuto [1 ]
Deki, Manato [2 ]
Watanabe, Hirotaka [3 ]
Tanaka, Atsushi [3 ,4 ]
Nitta, Shugo [3 ]
Honda, Yoshio [3 ]
Arai, Manabu [3 ]
Amano, Hiroshi [2 ,3 ,4 ,5 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[5] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 04期
关键词：
gallium nitride (GaN); IMPATT diode; microwave oscillation;
D O I：
10.35848/1882-0786/abe3dc
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p(+)-n simple abrupt junction and vertical mesa termination. The reverse I-V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of similar to 56 mW.
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页数：4
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