Experimental demonstration of GaN IMPATT diode at X-band

被引：20

作者：

Kawasaki, Seiya ^{[1
]}

Ando, Yuto ^{[1
]}

Deki, Manato ^{[2
]}

Watanabe, Hirotaka ^{[3
]}

Tanaka, Atsushi ^{[3
,4
]}

Nitta, Shugo ^{[3
]}

Honda, Yoshio ^{[3
]}

Arai, Manabu ^{[3
]}

Amano, Hiroshi ^{[2
,3
,4
,5
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[5] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 04期

关键词：

gallium nitride (GaN); IMPATT diode; microwave oscillation;

D O I：

10.35848/1882-0786/abe3dc

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p(+)-n simple abrupt junction and vertical mesa termination. The reverse I-V characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of similar to 56 mW.

引用

页数：4

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