Novel LTPS-TFT Pixel Circuit with OLED Luminance Compensation for 3D AMOLED Displays

被引：39

作者：

Fan, Ching-Lin ^{[1
]}

Chen, Yi-Chiung ^{[1
]}

Yang, Chuang-Cheng ^{[1
]}

Tsai, Yung-Kun ^{[1
]}

Huang, Bohr-Ran ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Taipei 106, Taiwan

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2016年 / 12卷 / 05期

关键词：

Active-matrix light emitting diode (AMOLED); low-temperature polycrystalline-silicon thin-film-transistor (LTPS-TFT); pixel circuit; 3D (three-dimensional); THIN-FILM TRANSISTORS; DEGRADATION; LIFETIME; DEVICES;

D O I：

10.1109/JDT.2016.2525736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel low-temperature polycrystalline-silicon thin-film-transistor pixel circuit for 3D active-matrix organic light-emitting diode (AMOLED) displays is presented in this work. The proposed pixel circuit employs high frame rate (240 Hz) emission driving scheme and only needs 3.5 s for input data period. Thus, 3D AMOLED displays can be realized under high speed operations. The simulation results demonstrate excellent stability in the proposed pixel circuit. The relative current error rate is only 0.967% under the threshold voltage deviation (Delta(VTH_DTFT) = +/-0.33 V) of driving TFT. With an OLED threshold voltage detecting architecture, the OLED current can be increased with the increased OLED threshold voltage to compensate for the OLED luminance degradation. The proposed pixel circuit can therefore effectively compensate for the DTFT threshold voltage shift and OLED electric degradation at the same time.

引用

页码：425 / 428

页数：4

共 18 条

[1] Fast Voltage-Programmed Pixel Architecture for AMOLED Displays
Bagheri, Mojtaba
Ashtiani, Shahin J.
Nathan, Arokia Nathan
[J]. JOURNAL OF DISPLAY TECHNOLOGY, 2010, 6 (05): : 191 - 195
[2] Operating lifetime of phosphorescent organic light emitting devices
Burrows, PE
Forrest, SR
Zhou, TX
Michalski, L
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (18) : 2493 - 2495
[3] Electrical compensation of OLED luminance degradation
Chaji, G. Reza
Ng, Clement
Nathan, Arokia
Werner, Ansgar
Birnstock, Jan
Schneider, Oliver
Blochwitz-Nimoth, Jan
[J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1108 - 1110
[4] Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors
Chen, TF
Yeh, CF
Lou, JC
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 457 - 459
[5] Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime
Cusumano, P.
[J]. SOLID-STATE ELECTRONICS, 2016, 116 : 30 - 32
[6] External Compensation of Nonuniform Electrical Characteristics of Thin-Film Transistors and Degradation of OLED Devices in AMOLED Displays
In, Hai-Jung
Kwon, Oh-Kyong
[J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) : 377 - 379
[7] Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display
Kimura, M
Yudasaka, I
Kanbe, S
Kobayashi, H
Kiguchi, H
Seki, S
Miyashita, S
Shimoda, T
Ozawa, T
Kitawada, K
Nakazawa, T
Miyazawa, W
Ohshima, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (12) : 2282 - 2288
[8] Lee H.J., 2006, SID Symposium Digest of Technical Papers, V37, P81
[9] A novel voltage driving method using 3-TFT pixel circuit for AMOLED
Lin, Chih-Lung
Tsai, Tsung-Ting
[J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (06) : 489 - 491
[10] A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED
Lin, Chih-Lung
Chen, Yung-Chih
[J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) : 129 - 131

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