Lead sulfide (PbS) thin films were deposited by CVD method to examine the effects of anionic and cationic dopants on optical and electrical properties for photovoltaic applications. XRD diffractograms verified the formation of cubic phase of multicrystalline PbS thin films. FESEM images showed surface morphologies in nano-dimensions (rods and flowers). UV-Vis-NIR spectrum revealed absorbance in the visible and NIR regions for all samples, in which dopants decreased the intensity of absorbance. Se as an anionic dopant for PbS thin films increased electrical resistance, acceptor concentrations, and crystallite defects, and decreased flat-band voltage and depletion width. Finally, photovoltaic measurements indicated that Zn-doped PbS thin film, as a photovoltaic cell, exhibited higher conversion efficiency and external quantum efficiency (EQE).
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USASaga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
机构:
Union Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
Safeera, T. A.
Johns, N.
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St Thomas Coll, Dept Phys, Trichur 680001, Kerala, India
IIT, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
Johns, N.
Anila, E. I.
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Union Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
机构:
Mubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, EgyptMubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, Egypt
Rafea, M. Abdel
Roushdy, N.
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Mubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, EgyptMubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, Egypt
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USASaga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
机构:
Union Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
Safeera, T. A.
Johns, N.
论文数: 0引用数: 0
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机构:
St Thomas Coll, Dept Phys, Trichur 680001, Kerala, India
IIT, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
Johns, N.
Anila, E. I.
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机构:
Union Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, IndiaUnion Christian Coll, Dept Phys, Optoelect & Nanomat Res Lab, Aluva 683102, Kerala, India
机构:
Mubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, EgyptMubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, Egypt
Rafea, M. Abdel
Roushdy, N.
论文数: 0引用数: 0
h-index: 0
机构:
Mubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, EgyptMubarak City Sci Res & Technol Applicat, Elect Mat Dept, Adv Technol & New Mat Inst, Alexandria, Egypt