Nanoscale doping of InAs via sulfur monolayers

被引：72

作者：

Ho, Johnny C. ^{[1
,2
,3
]}

Ford, Alexandra C. ^{[1
,2
,3
]}

Chueh, Yu-Lun ^{[1
,2
,3
]}

Leu, Paul W. ^{[1
,2
,3
]}

Ergen, Onur ^{[1
,2
,3
]}

Takei, Kuniharu ^{[1
,2
,3
]}

Smith, Gregory ^{[4
]}

Majhi, Prashant ^{[4
]}

Bennett, Joseph ^{[5
]}

Javey, Ali ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[4] SEMATECH, Austin, TX 78741 USA

[5] SVTC Technol, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

基金：

美国国家科学基金会;

关键词：

doping profiles; III-V semiconductors; indium compounds; monolayers; nanofabrication; nanostructured materials; p-n junctions; secondary ion mass spectra; semiconductor doping; sulphur; transmission electron microscopy; PASSIVATED INAS; SURFACE; ENHANCEMENT; TRANSISTOR;

D O I：

10.1063/1.3205113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of similar to 3.5 nm/decade is observed without significant defect density. The n(+)/p(+) junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of similar to 8x10(18) cm(-3).

引用

页数：3

共 26 条

[1] S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates [J].