In situ measurements of photo-induced volume changes in amorphous chalcogenide films

被引：20
|
作者：
Ganjoo, A [1 ]
Ikeda, Y
Shimakawa, K
机构：
[1] YM Syst Inc, Res & Dev Grp, Kyoto 615, Japan
[2] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷
关键词：
D O I：
10.1016/S0022-3093(99)00866-2
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Photo-induced thickness changes in obliquely deposited amorphous As2S3 and GeSe2 films have been measured to determine the mechanisms of changes during illumination. For As2S3, the thickness increases and then decreases and saturates after some time. There is a decrease followed by saturated change even after the illumination is switched off. On the other hand, GeSe2 has a continuous decrease of thickness with time, which remains constant after the illumination is turned off. The difference in these properties between As2S3 and GeSe2 films is discussed in terms of different structural units for these films (layered for a-As2S3 and three-dimensional for a-GeSe2). (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：919 / 923
页数：5
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