Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films

被引：14

作者：

Feng, Yu ^{[1
,2
]}

Wang, Can ^{[1
,2
]}

Tian, ShiLu ^{[1
,2
]}

Zhou, Yong ^{[1
,2
]}

Ge, Chen ^{[1
]}

Guo, HaiZhong ^{[1
]}

He, Meng ^{[1
]}

Jin, KuiJuan ^{[1
,2
,3
]}

Yang, GuoZhen ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2017年 / 60卷 / 06期

基金：

中国国家自然科学基金;

关键词：

BFO; buffer layer; strain; LEAKAGE CURRENT; THICKNESS;

D O I：

10.1007/s11433-017-9020-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

BiFeO3 (BFO) thin films with BaTiO3 (BTO) or SrTiO3 (STO) as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.

引用

页数：5

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