1/f Noise Characterization of n- and p-Type Polycrystalline-Silicon Thin-Film Transistors

被引：6

作者：

Behravan, Mahdokht ^{[1
]}

Story, David Todd ^{[2
]}

机构：

[1] Univ Michigan, Dept Radiat Oncol, Ann Arbor, MI 48109 USA

[2] Foley & Lardner LLP, Dept Elect, Boston, MA 02199 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2009年 / 9卷 / 03期

关键词：

Noise; semiconductor device noise; semiconductor-insulator interfaces; thin-film transistors (TFTs); LOW-FREQUENCY NOISE; FLAT-PANEL IMAGERS; LASER CRYSTALLIZATION; AMORPHOUS-SILICON; FLICKER NOISE; ORIGIN; MODEL;

D O I：

10.1109/TDMR.2009.2023080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a study of low-frequency-noise properties of n- and p-type polycrystalline-silicon (poly-Si) thin-film transistors (TFTs). The 1/f noise behavior of these devices prompted the use of the carrier number with correlated mobility fluctuation model for data analysis. From this model, trap densities in this study were found to range from 3.5 x 10(16) to 4 x 10(17) states/eV . cm(3), which is indicative of a good top surface of the channel and interface between the oxide and poly-Si. The normalized current noise of the p-channel TFTs changes with the inverse of current, independent of the width (W)-to-length (L) ratio of the channel; the normalized current noise of the n- channel TFTs also changes with the inverse of current, but not independent of the W/L ratio. For smaller currents, noise is caused by traps at or near the oxide/semiconductor interface, whereas for larger currents, the larger contribution to the noise is believed to originate from the bulk.

引用

页码：372 / 378

页数：7

共 27 条

[11] Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1469 - 1475
[12] Model of low frequency noise in polycrystalline silicon thin-film transistors
Dimitriadis, CA
Kamarinos, G
Brini, J
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 381 - 383
[13] A new laser-processed polysilicon TFT architecture
Fulks, RT
Ho, J
Boyce, JB
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) : 86 - 88
[14] IMPROVED ANALYSIS OF LOW-FREQUENCY NOISE IN FIELD-EFFECT MOS-TRANSISTORS
GHIBAUDO, G
ROUX, O
NGUYENDUC, C
BALESTRA, F
BRINI, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (02): : 571 - 581
[15] Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors
Giovannini, S
Bove, A
Valletta, A
Mariucci, L
Pecora, A
Fortunato, G
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3268 - 3270
[16] Change in transfer and low-frequency noise characteristics of n-channel polysilicon TFTs due to hot-carrier degradation
Hatzopoulos, A
Archontas, N
Hastas, NA
Dimitriadis, CA
Kamarinos, G
Georgoulas, N
Thanailakis, A
[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) : 390 - 392
[17] 1-F NOISE
HOOGE, FN
[J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23
[18] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
HUNG, KK
KO, PK
HU, CM
CHENG, YC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 654 - 665
[19] 1/f noise in CMOS transistors for analog applications from subthreshold to saturation
Jakobson, C
Bloom, I
Nemirovsky, Y
[J]. SOLID-STATE ELECTRONICS, 1998, 42 (10) : 1807 - 1817
[20] Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology
Lu, JP
Van Schuylenbergh, K
Ho, J
Wang, Y
Boyce, JB
Street, RA
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4656 - 4658

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