Diffusion in amorphous solids - Metallic alloys and elemental semiconductors

被引:30
作者
Frank, W
机构
[1] MAX PLANCK INST MET RES,INST PHYS,D-70569 STUTTGART,GERMANY
[2] UNIV STUTTGART,INST THEORET & ANGEW PHYS,D-70569 STUTTGART,GERMANY
关键词
self-diffusion and irradiation-enhanced diffusion in metallic glasses transition-metal diffusion in amorphous semiconductors; diffusion in undercooled metallic melts; solid-type versus fluid-type diffusion; radiotracer techniques; molecular-dynamics simulations;
D O I
10.4028/www.scientific.net/DDF.143-147.695
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this article an overview is presented of our present knowledge on diffusion in two groups of non-crystalline solids, namely metallic glasses and amorphous semiconductors. Whereas for metallic glasses emphasis is laid on self-diffusion, in the case of amorphous semiconductors diffusion of transition metals is considered. In both cases, diffusion is thermally activated like in crystalline solids. However, the diffusion mechanisms differ considerably from those operating in crystals. In metallic glasses, there is a change from vacancy-controlled diffusion in the as-produced amorphous state to direct collective diffusion in the relaxed amorphous state. In amorphous semiconductors, transition metals diffuse by interstitial-like hopping which is retarded by saturable traps, presumably dangling-bond-related extra-broad meshes in the covalent amorphous network. Finally attention has been paid to diffusion in undercooled melts of metallic alloys just above the glass-transition temperature, since from this an understanding of the transition from solid-type to fluid-type diffusion is expected.
引用
收藏
页码:695 / 710
页数:16
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