Instability-driven SiGe island growth

被引：181

作者：

Tromp, RM ^{[1
]}

Ross, FM ^{[1
]}

Reuter, MC ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.84.4641

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2 < x < 0.6) without nucleation. Rather, a strain-driven growth instability induces a network of elevated cells, where the angle of elevation self-limits when {105} facets form pyramidal islands. These strain-modulated surfaces may serve as a template for the spatially controlled growth of quantum dot ensembles.

引用

页码：4641 / 4644

页数：4

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