Ultrafast terahertz response in photoexcited, vertically grown few-layer graphene

被引:11
|
作者
Fu, Maixia [1 ,2 ,3 ]
Quan, Baogang [4 ]
He, Jingwen [1 ,2 ]
Yao, Zehan [4 ]
Gu, Changzhi [4 ]
Li, Junjie [4 ]
Zhang, Yan [1 ,2 ]
机构
[1] Capital Normal Univ, Minist Educ, Dept Phys, Beijing Key Lab Metamat & Devices, Beijing 10048, Peoples R China
[2] Capital Normal Univ, Minist Educ, Dept Phys, Key Lab Terahertz Optoelect, Beijing 10048, Peoples R China
[3] Henan Univ Technol, Coll Informat Sci & Engn, Zhengzhou 450001, Henan, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
SUPERCAPACITORS; CONDUCTIVITY; SPECTROSCOPY; MODULATOR;
D O I
10.1063/1.4944887
中图分类号
O59 [应用物理学];
学科分类号
摘要
The terahertz (THz) response from vertically aligned few-layer graphene samples with and without femtosecond optical excitation was investigated. The frequency-dependent optical conductivity of the photoexcited vertically aligned few-layer graphene had a strong free carrier response. Upon photoexcitation, a transient decrease in THz transmission on the subpicosecond timescale was observed. A modulation depth of nearly 16% was demonstrated in the range of the photoexcitation power used. The photoinduced ultrafast response presented here is distinct from previous studies on horizontally grown graphene. The mechanism underlying this photoconductive ultrafast response was investigated by measuring the transmission properties and by calculating the carrier density. The results of these studies are promising for the development of high-performance THz modulators and ultrafast switchable THz photoelectric devices. (C) 2016 AIP Publishing LLC.
引用
收藏
页数:5
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