Controllable synthesis and field emission properties of In2O3 nanostructures

被引：10

作者：

Bai, Dan ^{[1
]}

Zhang, Zhi ^{[1
]}

Li, Lijun ^{[1
]}

Xu, Feng ^{[1
]}

Yu, Ke ^{[1
]}

机构：

[1] E China Normal Univ, Dept Elect Engn, Minist Educ China, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2010年 / 45卷 / 02期

关键词：

In2O3; nanostructures; chemical vapor deposition; field emission; PHOTOLUMINESCENCE PROPERTIES; NANOWIRES; GROWTH; SEMICONDUCTOR; NANOCRYSTALS; FABRICATION; SENSORS; CO;

D O I：

10.1002/crat.200900602

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Large-scale In2O3 nanorods, nanocubes and nanowires have been successfully synthesized by chemical vapor deposition route under atmospheric pressure. The structures and morphologies were characterized by x-ray diffraction (XRD), scanning election microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The growth mechanisms of these In2O3 nanostructures were analyzed in detail based on the experimental results. Field-emission measurements of these nanostructures demonstrated that nanorods with rectangular cross-section possessed good performance with a turn-on field of 2.47 V mu m(-1) and a field enhancement factor of 4597. The room-temperature photoluminescence (PL) spectrum of the In2O3 nanostructure showed UV emission centered at about 396 nm and visible emissions located at 541 and 623 nm. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：173 / 177

页数：5

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