Controllable synthesis and field emission properties of In2O3 nanostructures

被引：10
|
作者：
Bai, Dan [1 ]
Zhang, Zhi [1 ]
Li, Lijun [1 ]
Xu, Feng [1 ]
Yu, Ke [1 ]
机构：
[1] E China Normal Univ, Dept Elect Engn, Minist Educ China, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2010年 / 45卷 / 02期
关键词：
In2O3; nanostructures; chemical vapor deposition; field emission; PHOTOLUMINESCENCE PROPERTIES; NANOWIRES; GROWTH; SEMICONDUCTOR; NANOCRYSTALS; FABRICATION; SENSORS; CO;
D O I：
10.1002/crat.200900602
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Large-scale In2O3 nanorods, nanocubes and nanowires have been successfully synthesized by chemical vapor deposition route under atmospheric pressure. The structures and morphologies were characterized by x-ray diffraction (XRD), scanning election microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The growth mechanisms of these In2O3 nanostructures were analyzed in detail based on the experimental results. Field-emission measurements of these nanostructures demonstrated that nanorods with rectangular cross-section possessed good performance with a turn-on field of 2.47 V mu m(-1) and a field enhancement factor of 4597. The room-temperature photoluminescence (PL) spectrum of the In2O3 nanostructure showed UV emission centered at about 396 nm and visible emissions located at 541 and 623 nm. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：173 / 177
页数：5
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