A Physics-Based Compact Model of Quantum-Mechanical Effects for Thin Cylindrical Si-Nanowire MOSFETs

被引：1

作者：

Cousin, Bastien ^{[1
]}

Rozeau, Olivier ^{[1
]}

Jaud, Marie-Anne ^{[1
]}

Jomaah, Jalal ^{[2
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

[2] IMEP, MINIATEC, INPG, F-38016 Grenoble, France

来源：

PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | 2009年

关键词：

SURROUNDING-GATE MOSFETS; THRESHOLD VOLTAGE; INVERSION; QUANTIZATION; MOBILITY;

D O I：

10.1109/VTSA.2009.5159313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Since we know that quantum-mechanical effects are predominant in surrounding-gate MOSFETs, a model should be developed. For the first time, this paper presents an analytic model of quantization for thin cylindrical Si-Nanowire MOSFETs by using a variational approach. The model is implemented into a surface potential like model. It is shown that results agree with the numerical simulations.

引用

收藏

页码：107 / +

页数：2

相关论文

共 14 条

[1] Multiple-gate SOI MOSFETs [J].

Colinge, JP .

SOLID-STATE ELECTRONICS, 2004, 48 (06) :897-905

[2] Hydrogen annealing of arrays of planar and vertically stacked Si nanowires [J].

Dornel, E. ;

Ernst, T. ;

Barbe, J. C. ;

Hartmann, J. M. ;

Delaye, V. ;

Aussenac, F. ;

Vizioz, C. ;

Borel, S. ;

Maffini-Alvaro, V. ;

Isheden, C. ;

Foucher, J. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[3] Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs [J].

Ge, LX ;

Fossum, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) :287-294

[4] Measurement of carrier mobility in silicon nanowires [J].

Gunawan, Oki ;

Sekaric, Lidija ;

Majumdar, Amlan ;

Rooks, Michael ;

Appenzeller, Joerg ;

Sleight, Jeffrey W. ;

Guha, Supratik ;

Haensch, Wilfried .

NANO LETTERS, 2008, 8 (06) :1566-1571

[5] Continuous analytic I-V model for surrounding-gate MOSFETs [J].

Jiménez, D ;

Iñíguez, B ;

Suñé, J ;

Marsal, LF ;

Pallarès, J ;

Roig, J ;

Flores, D .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) :571-573

[6]

*SILVACO INT IN, ATLAS US MAN DEV SIM

[7] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[8] Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs [J].

Trivedi, VP ;

Fossum, JG .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) :579-582

[9] INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS ON THE THRESHOLD VOLTAGE AND THE MOBILITY OF DEEP-SUBMICROMETER MOSFETS [J].

VANDORT, MJ ;

WOERLEE, PH ;

WALKER, AJ ;

JUFFERMANS, CAH ;

LIFKA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :932-938

[10] A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS [J].

VANDORT, MJ ;

WOERLEE, PH ;

WALKER, AJ .

SOLID-STATE ELECTRONICS, 1994, 37 (03) :411-414