Fourier-transform Infrared Spectroscopy of Femtosecond Laser-modified SiC

被引：0

作者：

Tomita, T. ^{[1
]}

Iwami, M. ^{[1
]}

Matsuo, S. ^{[1
]}

Hashimoto, S. ^{[1
]}

Saito, S. ^{[2
]}

Sakai, K. ^{[2
]}

机构：

[1] Univ Tokushima, Dept Ecosyst Engn, Tokushima 7708506, Japan

[2] Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan

来源：

JOURNAL OF LASER MICRO NANOENGINEERING | 2009年 / 4卷 / 03期

关键词：

Femtosecond laser; silicon carbide (SiC); Fourier transform infrared (FTIR) spectroscopy; PERIODIC SURFACE-STRUCTURE; REFLECTANCE; GAAS;

D O I：

10.2961/jlmn.2009.03.0007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudinal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infrared probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.

引用

页码：182 / 185

页数：4

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