A compact large signal model of LDMOS

被引：14
|
作者：
Tang, CW [1 ]
Tong, KY [1 ]
机构：
[1] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期
关键词：
LDMOS; modeling;
D O I：
10.1016/S0038-1101(02)00238-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral double-diffused MOSFETs (LDMOS) are becoming more popular in RF power amplifiers for wireless communication applications. The understanding of non-linearity in LDMOS is critical in order to design ultra-linear power amplifiers to meet the stringent needs of current wireless systems. We have developed a compact large signal model that can predict accurately the transconductance of the device and its higher order derivatives. Such large signal model is needed in the accurate simulation of non-linear circuits. Our device measurements show that the higher order derivatives of the transconductance are very sensitive to the gate bias. The model has been applied to simulate the gain and third order intermodulation distortion in a RF LDMOS amplifier, and the simulated results agree well with the experimental measurements. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：2111 / 2115
页数：5
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