Assessing simultaneous effect of Ar/O2 ratio and process pressure on ammonia sensing properties of reactive DC magnetron sputtered SnO2 thin films

被引：2
作者：
Prajesh, Rahul [1 ,2 ]
Jha, Ravindra Kumar [1 ]
Saini, Vikas [1 ]
Nahid, Mohd [1 ]
Goyal, Vinay [1 ,2 ]
Chaudhury, Pubali [1 ]
Bhargava, Jitendra [1 ]
Sharma, Ashok Kumar [1 ]
Agarwal, Ajay [1 ,2 ]
机构：
[1] CSIR Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
来源：
MATERIALS LETTERS | 2021年 / 286卷
关键词：
Electronic materials; Sputtering; Sensors; Thin films; Tin oxide;
D O I：
10.1016/j.matlet.2020.129239
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin Oxide (SnO2) has established itself as excellent receptor in chemiresistive detection of ammonia gas in last two decades. There have been several routes developed to obtain a pristine SnO2 film over this time however, physical vapor deposition remains an attractive route for the same due to the control it provides for the growth and its scalability for industry scale production. In this work, we report on the effect of oxygen and argon ratio at different pressure in sputtering unit on the sensitivity of tin oxide. In particular, our investigation revealed that the device based on SnO2 thin film obtained at an sputtering pressure of 10 mTorr and Ar/O-2 ratio of 50/50 possess highest response (similar to 27.97% for 30 ppm of ammonia) at optimal temperature of 220 degrees C. (C) 2020 Elsevier B.V. All rights reserved.
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页数：5
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