Assessing simultaneous effect of Ar/O2 ratio and process pressure on ammonia sensing properties of reactive DC magnetron sputtered SnO2 thin films

被引：2
作者：
Prajesh, Rahul [1 ,2 ]
Jha, Ravindra Kumar [1 ]
Saini, Vikas [1 ]
Nahid, Mohd [1 ]
Goyal, Vinay [1 ,2 ]
Chaudhury, Pubali [1 ]
Bhargava, Jitendra [1 ]
Sharma, Ashok Kumar [1 ]
Agarwal, Ajay [1 ,2 ]
机构：
[1] CSIR Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
来源：
MATERIALS LETTERS | 2021年 / 286卷
关键词：
Electronic materials; Sputtering; Sensors; Thin films; Tin oxide;
D O I：
10.1016/j.matlet.2020.129239
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin Oxide (SnO2) has established itself as excellent receptor in chemiresistive detection of ammonia gas in last two decades. There have been several routes developed to obtain a pristine SnO2 film over this time however, physical vapor deposition remains an attractive route for the same due to the control it provides for the growth and its scalability for industry scale production. In this work, we report on the effect of oxygen and argon ratio at different pressure in sputtering unit on the sensitivity of tin oxide. In particular, our investigation revealed that the device based on SnO2 thin film obtained at an sputtering pressure of 10 mTorr and Ar/O-2 ratio of 50/50 possess highest response (similar to 27.97% for 30 ppm of ammonia) at optimal temperature of 220 degrees C. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数：5
相关论文
共 50 条
[1]   Effect of substrate bias voltage and substrate temperature on the physical properties of dc magnetron sputtered SnO2 thin films [J].
Prathyusha, Tekuru ;
Srikanth, Thotapalli ;
Reddy, Akepati Sivasankar ;
Reddy, Pamanji Sreedhara ;
Reddy, Ch. Seshendra .
OPTIK, 2016, 127 (20) :9457-9463
[2]   Tuning the Crystalline Structure and Properties of TiOx Thin Films Deposited by DC Reactive Magnetron Sputtering by Adjusting the Ar/O2 Ratio [J].
Feil, Adriano F. ;
Papaleo, Ricardo M. ;
Hubler, Roberto .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (12) :8967-8974
[3]   Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO2 films [J].
Reddy, A. Sivasankar ;
Figueiredo, N. M. ;
Cho, H. C. ;
Lee, K. S. ;
Cavaleiro, A. .
MATERIALS CHEMISTRY AND PHYSICS, 2012, 133 (2-3) :1024-1028
[4]   Effect of substrate temperature on reactive RF magnetron sputtered SnO2 thin films for photovoltaic applications [J].
Vengatesh, P. ;
Shyju, T. S. .
MATERIALS TODAY-PROCEEDINGS, 2021, 47 :1035-1039
[5]   Effect of Ar:O2 ratio on reactively magnetron sputtered ZnO film's properties [J].
Ali, Zahid ;
Afzal, Naveed ;
Rafique, Mohsin .
MATERIALS RESEARCH EXPRESS, 2019, 6 (11)
[6]   Influence of Discharge Gas Pressure on Structural Properties of SnO2 Thin Films Deposited by Reactive Magnetron Sputtering [J].
Shen, Yanbai ;
Wei, Dezhou ;
Liu, Wengang ;
Gao, Shuling ;
Cui, Baoyu ;
Han, Cong ;
Li, Mingyang ;
Zhang, Ruiyang .
ADVANCES ON MATERIALS ENGINEERING, 2013, 377 :217-221
[7]   Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films [J].
Prasanna, S. ;
Mohan, Rao G. ;
Jayakumar, S. ;
Kannan, M. D. ;
Ganesan, V .
THIN SOLID FILMS, 2012, 520 (07) :2689-2694
[8]   Nanocrystalline SnO2 and Au:SnO2 thin films prepared by direct current magnetron reactive sputtering [J].
Reddy, A. Sivasankar ;
Figueiredo, N. M. ;
Cavaleiro, A. .
VACUUM, 2012, 86 (09) :1323-1327
[9]   Impact of O2/Ar gas ratio on the DC reactive magnetron sputtered NiO thin films for ultrafast detection with high sensitivity and selectivity towards H2S gas [J].
Srivastava, Stuti ;
Gangwar, Amit Kumar ;
Kumar, Ashwani ;
Gupta, Govind ;
Singh, Preetam .
MICRO AND NANOSTRUCTURES, 2023, 184
[10]   Effect of O2/Ar gas flow ratio on the optical properties and mechanical stress of sputtered HfO2 thin films [J].
Jena, S. ;
Tokas, R. B. ;
Misal, J. S. ;
Rao, K. D. ;
Udupa, D. V. ;
Thakur, S. ;
Sahoo, N. K. .
THIN SOLID FILMS, 2015, 592 :135-142
12345