Half Bridge Soft Switching Resonant Converter with Silicon Carbide Power MOSFETs for Induction Heating

被引:0
作者
Phankong, Nathabhat [1 ]
Chudjuarjeen, Saichol [2 ]
Bhumkittipich, Krischonme [1 ]
Hikihara, Takashi [3 ]
机构
[1] Rajamangala Univ Technol Thanyaburi, Dept Elect Engn, Fac Engn, Khlong Hok, Thailand
[2] Rajamangala Univ Technol Krungthep, Dept Elect Engn, Fac Engn, Bangkok, Thailand
[3] Kyoto Univ, Grad Sch Engn, Dept Elect Engn, Kyoto, Japan
来源
2016 19TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2016) | 2016年
关键词
Power semiconductor device; Silicon Carbide; resonant inverter and induction heating; FREQUENCY; INVERTERS; ZVS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a half bridge soft switching resonant converter for induction heating load with SiC MOSFET devices is proposed. In order to raise the efficiency of the proposed converter, a single phase half bridge resonant converter integrated with SiC MOSFET is used. All of the switching devices in the proposed converter achieve zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To verify the validity of the proposed topology, the prototype is tested around 650 W and 53 kHz of operating frequency. The experimental results shown that the proposed converter with SiC MOSFET has high efficiency characteristics.
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页数:4
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