Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

被引：74
|
作者：
Compagnoni, Christian Monzio [1 ,2 ]
Ghidotti, Michele [1 ,2 ]
Lacaita, Andrea L. [1 ,2 ,3 ]
Spinelli, Alessandro S. [1 ,2 ,3 ]
Visconti, Angelo [4 ]
机构：
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy
[3] CNR, Ist Foton & Nanotecnol, I-20133 Milan, Italy
[4] R&D Technol Dev, I-20041 Agrate Brianza, MI, Italy
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 09期
关键词：
Flash memories; random telegraph noise (RTN); semiconductor-device modeling; staircase programming;
D O I：
10.1109/LED.2009.2026658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a detailed investigation of the random telegraph noise (RTN) effects on the threshold-voltage distribution of Flash memory arrays programmed by the staircase algorithm. RTN is shown to introduce an exponential tail above the program verify level when considering the cell threshold voltage that ends the program operation. In addition, when a subsequent read operation is considered, a clear exponential tail is shown to appear even below the program verify level. We present a simple analysis that is able to predict the threshold-voltage distribution width accounting for both these enlargement contributions, defining practical formulas for the programming accuracy as a function of the staircase step amplitude and the RTN distribution.
引用
收藏
页码：984 / 986
页数：3
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