Diffusion of As ions and self-diffusion in silicon during implantation

被引：1

作者：

Demakov, KD ^{[1
]}

Starostin, VA ^{[1
]}

Shemardov, SG ^{[1
]}

机构：

[1] Russian Res Ctr, Kurchatov Inst, Moscow 123182, Russia

来源：

TECHNICAL PHYSICS | 2002年 / 47卷 / 10期

关键词：

Silicon; Experimental Data; Concentration Profile; Silicon Substrate; Ionic Diffusion;

D O I：

10.1134/1.1514818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050degreesC and ion current of 40 muA/cm(2) , as well as at 1050degreesC and 10 muA/cm(2) , are presented. On the basis of our and previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in silicon is simulated. A number of interesting dependences, which are discussed in the conclusion of this study, are obtained. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：1333 / 1336

页数：4

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