Impact of test-fixture forward coupling on on-wafer silicon device measurements

被引:10
|
作者
Kolding, TE [1 ]
机构
[1] Aalborg Univ, RF Integrated Syst & Circuits Grp, DK-9220 Aalborg, Denmark
来源
关键词
calibration; integrated circuits; microwave measurements;
D O I
10.1109/75.843105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Often, the test-fixture forward coupling is ignored during on-wafer device measurements, although existing de-embedding techniques provide means for addressing its effect, In this letter it is demonstrated that large errors may occur if forward coupling is not determined and accounted for. An investigation based on basic scaling properties of MOSFET's is proposed as a benchmark test to partially verify de-embedding methods.
引用
收藏
页码:73 / 74
页数:2
相关论文
共 41 条
  • [31] Accurate and Efficient Self-Calibration Algorithm of Broadband On-Wafer Scattering-Parameter Measurements for Production Test Applications Up to 110 GHz
    Huang, Chien-Chang
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2017, 7 (06): : 990 - 998
  • [32] Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
    Vandamme, EP
    Schreurs, DMMP
    van Dinther, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) : 737 - 742
  • [33] Application of Piezoresistive Stress Sensor in Wafer Bumping and Drop Impact Test of Embedded Ultra Thin Device
    Zhang, Xiaowu
    Rajoo, Ranjan
    Selvanayagam, Cheryl S.
    Kumar, Aditya
    Rao, Vempati Srinivasa
    Khan, Navas
    Kripesh, V.
    Lau, John H.
    Kwong, D. -L.
    Sundaram, V.
    Tummula, Rao R.
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1276 - 1282
  • [34] The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
    Feil, Maximilian W.
    Huerner, Andreas
    Puschkarsky, Katja
    Schleich, Christian
    Aichinger, Thomas
    Gustin, Wolfgang
    Reisinger, Hans
    Grasser, Tibor
    CRYSTALS, 2020, 10 (12) : 1 - 14
  • [35] On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability
    Fakhfakh, S.
    Martin, A.
    Campovecchio, M.
    Neveux, G.
    Barataud, D.
    INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2018,
  • [36] Comparison of silicon wafer temperature measurements using thin film thermocouples and lightpipe radiation thermometers in a thermometry test bed
    Ball, KS
    Tan, GY
    10TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2002, 2002, : 75 - 75
  • [37] A Fixed Probe Position Self-Calibration Algorithm of Broadband On-Wafer Scattering Parameter Measurements without Impedance-Standard Substrate for RFIC Production Test Applications
    Huang, Chien-Chang
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [38] True Kelvin CMOS Test Structure to achieve Accurate and Repeatable DC Wafer-Level Measurements for Device Modelling Applications
    Sia, Choon Beng
    2017 INTERNATIONAL CONFERENCE OF MICROELECTRONIC TEST STRUCTURES (ICMTS), 2017,
  • [39] Impact of Drain Voltage Coupling on Device and Circuit-Level Performance of Negative Capacitance Silicon Nanotube FET
    Moparthi, Sandeep
    Tiwari, Pramod Kumar
    Saramekala, Gopi Krishna
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2022, 21 : 547 - 554
  • [40] Impact of Drain Voltage Coupling on Device and Circuit-Level Performance of Negative Capacitance Silicon Nanotube FET
    Moparthi, Sandeep
    Tiwari, Pramod Kumar
    Saramekala, Gopi Krishna
    IEEE Transactions on Nanotechnology, 2022, 21 : 547 - 554