Impact of test-fixture forward coupling on on-wafer silicon device measurements

被引：10

作者：

Kolding, TE ^{[1
]}

机构：

[1] Aalborg Univ, RF Integrated Syst & Circuits Grp, DK-9220 Aalborg, Denmark

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 02期

关键词：

calibration; integrated circuits; microwave measurements;

D O I：

10.1109/75.843105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Often, the test-fixture forward coupling is ignored during on-wafer device measurements, although existing de-embedding techniques provide means for addressing its effect, In this letter it is demonstrated that large errors may occur if forward coupling is not determined and accounted for. An investigation based on basic scaling properties of MOSFET's is proposed as a benchmark test to partially verify de-embedding methods.

引用

页码：73 / 74

页数：2

共 41 条

[1] A comparison of shielded and conventional on-wafer test-fixture forward coupling on silicon-on-insulator (SOI) substrate
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