Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

被引：21
|
作者：
Pinault-Thaury, Marie-Amandine [1 ]
Stenger, Ingrid [1 ]
Gillet, Remi [1 ]
Temgoua, Solange [1 ]
Chikoidze, Ekaterina [1 ]
Dumont, Yves [1 ]
Jomard, Francois [1 ]
Kociniewski, Thierry [1 ]
Barjon, Julien [1 ]
机构：
[1] Univ Paris Saclay, GEMaC, CNRS, UVSQ, F-78000 Versailles, France
来源：
CARBON | 2021年 / 175卷
关键词：
D O I：
10.1016/j.carbon.2021.01.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm(2)/V.s at 450K. Its electrical properties are compared to those measured on conventionally oriented (100) and (111) homoepilayers synthetized in the same reactor with similar phosphorus content (similar to 1-2x10(18) at/cm(3)). The (113) layer presents higher electron mobility than the (100) film, despite a comparable compensation ratio. Besides, above 450 K the (113) electron mobility is also higher than the one of the low compensated (111) sample. This shows the attractive character of the (113) diamond orientation for n-type doping. (C) 2021 Elsevier Ltd. All rights reserved.
引用
收藏
页码：254 / 258
页数：5
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