Finite element analysis for grinding of wire-sawn silicon wafers: a designed experiment

被引:38
作者
Pei, Z [1 ]
Xin, XJ
Liu, W
机构
[1] Kansas State Univ, Dept Ind & Mfg Syst Engn, Manhattan, KS 66506 USA
[2] Kansas State Univ, Dept Mech & Nucl Engn, Manhattan, KS 66506 USA
关键词
design of experiment; factorial design; finite element analysis; grinding; lapping; machining; material removal; semiconductor material; silicon wafers; slicing;
D O I
10.1016/S0890-6955(02)00167-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. This paper presents the results of a finite element analysis for grinding of wire-sawn silicon wafers. In this investigation, a four-factor two-level full factorial design is employed to reveal the main effects as well as the interaction effects of four factors (wafer thickness, waviness wavelength, waviness height and grinding force) on effectiveness of waviness reduction. The implications of this study to manufacturing are also discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:7 / 16
页数:10
相关论文
共 24 条
[1]  
[Anonymous], 2000, MICROCHIP FABRICATIO
[2]  
BAWA MS, 1995, SEMICONDUCTOR IN NOV, P115
[3]  
BUTTNER A, 1985, IND DIAMOND REV, V2, P77
[4]  
DeVor R. E., 1992, STAT QUALITY DESIGN
[5]  
DUDLEY JA, 1986, MICROELECTRONIC MANU, V4, P1
[6]  
FARRIS TN, 1994, ASME APPL MECH REV 2, V47, pS204
[7]  
FUKAMI T, 1997, Patent No. 0782179
[8]   CHARACTERIZATION OF MIRROR-LIKE WAFER SURFACES USING THE MAGIC MIRROR METHOD [J].
HAHN, S ;
KUGIMIYA, K ;
YAMASHITA, M ;
BLAUSTEIN, PR ;
TAKAHASHI, K .
JOURNAL OF CRYSTAL GROWTH, 1990, 103 (1-4) :423-432
[9]  
HAHN S, 1992, SEMICONDUCTOR SCI TE, V7, P80
[10]  
KASSIR SM, 1999, Patent No. 5964646