Observation of the antiferromagnetic spin Hall effect

被引：190

作者：

Chen, Xianzhe ^{[1
]}

Shi, Shuyuan ^{[2
]}

Shi, Guoyi ^{[2
]}

Fan, Xiaolong ^{[4
]}

Song, Cheng ^{[1
]}

Zhou, Xiaofeng ^{[1
]}

Bai, Hua ^{[1
]}

Liao, Liyang ^{[1
]}

Zhou, Yongjian ^{[1
]}

Zhang, Hanwen ^{[4
]}

Li, Ang ^{[5
]}

Chen, Yanhui ^{[5
]}

Han, Xiaodong ^{[5
]}

Jiang, Shan ^{[6
,7
]}

Zhu, Zengwei ^{[6
,7
]}

Wu, Huaqiang ^{[8
]}

Wang, Xiangrong ^{[9
]}

Xue, Desheng ^{[4
]}

Yang, Hyunsoo ^{[2
,3
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing Innovat Ctr Future Chips, Sch Mat Sci & Engn, MOE Key Lab Adv Mat, Beijing, Peoples R China

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore

[3] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore, Singapore

[4] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou, Peoples R China

[5] Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing Key Lab Microstruct & Property Solids, Beijing, Peoples R China

[6] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan, Peoples R China

[7] Huazhong Univ Sci & Technol, Sch Phys, Wuhan, Peoples R China

[8] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China

[9] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China

来源：

NATURE MATERIALS | 2021年 / 20卷 / 06期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

31;

D O I：

10.1038/s41563-021-00946-z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The discovery of the spin Hall effect(1) enabled the efficient generation and manipulation of the spin current. More recently, the magnetic spin Hall effect(2,3) was observed in non-collinear antiferromagnets, where the spin conservation is broken due to the non-collinear spin configuration. This provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization. Here, we report a magnetic spin Hall effect in a collinear antiferromagnet, Mn2Au. The spin currents are generated at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term this effect the 'antiferromagnetic spin Hall effect'. The out-of-plane spins from the antiferromagnetic spin Hall effect are favourable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.

引用

页码：800 / +

页数：6

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