Erbium-ion implantation into various crystallographic cuts of Al2O3

被引：3

作者：

Nekvindova, P. ^{[3
]}

Mackova, A. ^{[1
,2
]}

Malinsky, P. ^{[1
,2
]}

Cajzl, J. ^{[3
]}

Svecova, B. ^{[3
]}

Oswald, J. ^{[4
]}

Wilhelm, R. A. ^{[5
,6
]}

机构：

[1] Acad Sci Czech Republic, Inst Nucl Phys, Vvi, CZ-25068 Rez, Czech Republic

[2] Univ JE Purkyne, Fac Sci, Dept Phys, Usti Nad Labem 40096, Czech Republic

[3] Inst Chem Technol, Dept Inorgan Chem, Prague 16628 6, Czech Republic

[4] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253, Czech Republic

[5] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[6] Tech Univ Dresden, D-01062 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 365卷

关键词：

Sapphire; Erbium; Ion implantation; Luminescence; OPTICAL WAVE-GUIDES; STRUCTURAL-CHANGES; SAPPHIRE; LINBO3; ACTIVATION;

D O I：

10.1016/j.nimb.2015.07.024

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reports on the importance of crystallographic cuts with a different orientation on the luminescent properties and structural changes of Al2O3 implanted with Er+ ions at 190 keV and with a fluence of to x 10(16) cm(-2). Post-implantation annealing at 1000 degrees C in oxygen atmosphere was also done. The chemical compositions and erbium concentration-depth profiles of implanted layers were studied by Rutherford Backscattering Spectrometry (RBS) and compared to SRIM simulations. The same value of the maximum erbium concentration (up to 2 at.%) was observed at a depth of about 40 nm for all crystallographic cuts. The structural properties of the prepared layers were characterised by RBS/channelling. The relative amount of disordered atoms of 70-80% was observed in the prepared implanted layers and discussed for various cuts. It has been found that erbium is positioned randomly in the Al2O3 crystalline matrix, and no preferential positions appeared even after the annealing procedure. Erbium luminescence properties were measured in the wavelength range of 1440-1650 nm for all samples. As-implanted Al2O3 samples had a significant luminescence band at 1530 nm. The best luminescence was repeatedly observed in the < 0 0 0 1 > cut of Al2O3. The annealing procedure significantly improved the luminescent properties. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：89 / 93

页数：5

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