Reducing dielectric loss in Na0.5Bi0.5TiO3 based high temperature capacitor material

被引：22

作者：

Hoang, An-Phuc ^{[1
]}

Steiner, Sebastian ^{[1
]}

Yang, Fan ^{[2
]}

Li, Linhao ^{[2
]}

Sinclair, Derek C. ^{[2
]}

Fromling, Till ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, FB Nichtmetall Anorgan Werkstoffe, Alarich Weiss Str 2, D-64287 Darmstadt, Germany

[2] Univ Sheffield, Dept Mat Sci & Engn, Sir Robert Hadfield Bldg,Mappin St, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2021年 / 41卷 / 04期

关键词：

High temperature capacitor; defect chemistry; dielectric loss; lead-free; NBT; ELECTRICAL-PROPERTIES; IMPEDANCE SPECTROSCOPY; CONDUCTION MECHANISMS; SITE NONSTOICHIOMETRY; PHASE-TRANSITIONS; CERAMICS;

D O I：

10.1016/j.jeurceramsoc.2020.07.005

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The demand for capacitors exhibiting low sensitivity towards temperature changes and high power peaks has increased significantly. Recently, Na0.5Bi0.5TiO3 (NBT) based ceramics became excellent candidates for such extreme temperature capacitors. The dielectric loss of these materials is, however, difficult to control because of the complex defect chemistry of NBT based ceramics. Therefore, it is the limiting factor for high temperature applications. In this work, we present a strategy to increase the upper temperature limit for low dielectric loss. The addition of BiAlO3 to Na0.5Bi0.5TiO3-BaTiO3-CaZrO3 reduces the loss and sensitivity towards Bi evaporation during synthesis. For unmodified samples, the relative permittivity (epsilon(r) = 581, at 1 kHz) varies less than 15 %, while the dielectric loss stays below 0.02 between-68 and 368 degrees C. With the addition of BiAlO3, the temperature range of low loss extends from -68 to 391 degrees C at even higher permittivity (epsilon(r) = 628, at 1 kHz).

引用

页码：2587 / 2595

页数：9

共 63 条

[1] High-temperature dielectrics in CaZrO3-modified Bi1/2Na1/2TiO3-based lead-free ceramics [J].