SJ-LDMOS with high breakdown voltage and ultra-low on-resistance

被引：16

作者：

Chen, W. ^{[1
]}

Zhang, B. ^{[1
]}

Li, Z. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Ctr IC Design, Chengdu 610054, Sichuan, Peoples R China

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 22期

关键词：

D O I：

10.1049/el:20062751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new design concept is proposed to eliminate the substrate-assisted depiction effect in a super-junction (SJ) LDMOS. The key feature of the concept is that a non-uniform N-buried layer is implemented which compensates for the charge interaction between the P-substrate and SJ region, realising high breakdown voltage (> 700 V) and ultra-low on-resistance. Furthermore, the proposed device is compatible with smart power technology.

引用

页码：1314 / 1316

页数：3

共 15 条

[1] CHEN W, 2006, P ISPSD 06 JUN, P269
[2] A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC
Chen, Wanjun
Zhang, Bo
Li, Zhaoji
[J]. MICROELECTRONICS JOURNAL, 2006, 37 (07) : 574 - 578
[3] Disney DR, 2001, ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P399, DOI 10.1109/ISPSD.2001.934638
[4] Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping
Hardikar, S
Tadikonda, R
Green, DW
Vershinin, KV
Narayanan, EMS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 2223 - 2228
[5] Hossain Z, 2004, ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P237
[6] Hossain Z, 2002, PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P137
[7] A low on resistance 700V charge balanced LDMOS with intersected WELL structure
Kim, MH
Kim, JJ
Choi, YS
Jeon, CK
Kim, SL
Kang, HS
Song, CS
[J]. ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 220 - 223
[8] A VERSATILE 700-1200-V IC PROCESS FOR ANALOG AND SWITCHING APPLICATIONS
LUDIKHUIZE, AW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (07) : 1582 - 1589
[9] ARBITRARY LATERAL DIFFUSION PROFILES
MERCHANT, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (12) : 2226 - 2230
[10] SJ/RESURF LDMOST
Nassif-Khalil, SG
Hou, LZ
Salama, CAT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (07) : 1185 - 1191

← 1 2 →