A near-infrared digital camera in polycrystalline germanium integrated on silicon

被引：28

作者：

Colace, Lorenzo ^{[1
]}

Masini, Gianlorenzo

Cencelli, Valentino

DeNotaristefani, Francesco

Assanto, Gaetano

机构：

[1] Univ Roma Tre, Dept Elect Engn, Nonlinear Opt & OptoElect Lab, I-00146 Rome, Italy

[2] Univ Roma Tre, CNISM, I-00146 Rome, Italy

[3] Univ Roma Tre, Ist Nazl Fis Nucl, Natl Inst Nucl Phys, I-00146 Rome, Italy

[4] Univ Roma Tre, Dept Elect Engn, Microelect Lab, I-00146 Rome, Italy

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 3-4期

关键词：

CMOS integrated circuits; germanium radiation detectors; imaging; near infrared; optoelectronic devices; photodiodes; silicon optoelectronics;

D O I：

10.1109/JQE.2007.893001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 x 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera.

引用

页码：311 / 315

页数：5

共 15 条

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COLACE L, 2006, SILICON HETEROSTRUCT, P731

[2]

COLACE L, 1998, MICROCRYST NANOCRYST, V536, P469

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