Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

被引：29
作者：
Krishna, S [1 ]
Qasaimeh, O
Bhattacharya, P
McCann, PJ
Namjou, K
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Univ Oklahoma, Sch Elect & Comp Engn, Lab Elect Properties Mat, Norman, OK 73019 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期
关键词：
D O I：
10.1063/1.126646
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (similar to 1 mu m) interband laser. The far-infrared signal, centered at 12 mu m, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)04923-8].
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页码：3355 / 3357
页数：3
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