A numerical simulation model for the growth of GaxIn1-xSb by the travelling heater method

A numerical simulation model for the growth of Gn(x)In(1-x)Sb by the traveling heater method (THM) is presented. The cell configuration and the furnace thermal profile are adopted from the experimental setup of Amistar Research Inc. The field equations are solved numerically by an adaptive finite element procedure as the interfaces between the solid and liquid phases change in time. Numerical results show that the furnace thermal profile, the thermal as well as solutal convection in the liquid solution have significant effects on the growth process. Results are only presented for small growth times. However, it is asserted that the present simulation model could be used to simulate the entire THM growth process of ternary alloys if the required computational power is available.