Morphological studies of annealed GaAs and GaSb surfaces by micro-Raman spectroscopy and EDX microanalysis

被引：19

作者：

Campos, CEM ^{[1
]}

Pizani, PS ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

APPLIED SURFACE SCIENCE | 2002年 / 200卷 / 1-4期

关键词：

surface structure; morphology; roughness; topography; Raman scattering; scanning electron microscopy (SEM); gallium arsenide; gallium antimonide;

D O I：

10.1016/S0169-4332(02)00617-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron diffraction X-ray (EDX) microanalysis and micro-Raman spectroscopy were used to study the annealed semi-conductor surfaces. EDX images showed evidences of two types of regions on the annealed GaAs and GaSb surfaces. Micro-Raman results displayed good proof of two different regions into the surface of both semiconductors, since the spectra of one region showed considerable differences to the spectra of the other. The most notable difference is the transverse optical (TO) activation and the decrease of intensity of other Raman lines in the spectra of very small regions. This work calls attention to the sensibility of micro-Raman experiments to short-length defects, which cannot be detected by EDX analysis. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：111 / 116

页数：6

共 8 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2] FORMATION OF AS PRECIPITATES IN GAAS BY ION-IMPLANTATION AND THERMAL ANNEALING [J].

CLAVERIE, A ;

NAMAVAR, F ;

LILIENTALWEBER, Z .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1271-1273

[3] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].

FARROW, RL ;

CHANG, RK ;

MROCZKOWSKI, S ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770

[4] Raman probing of thermal damage depth profile in annealed GaAs [J].

Pizani, PS ;

Campos, CEM .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6588-6591

[5] Detection of As2O3 arsenic oxide on GaAs surface by Raman scattering [J].

Quagliano, LG .

APPLIED SURFACE SCIENCE, 2000, 153 (04) :240-244

[6] INVESTIGATION BY RAMAN-SCATTERING OF THE PROPERTIES OF III-V COMPOUND SEMICONDUCTORS AT HIGH-TEMPERATURE [J].

SHEALY, JR ;

WICKS, GW .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1173-1175

[7] Diameter of As clusters in LT-GaAs by Raman spectroscopy [J].

Toufella, M ;

Puech, P ;

Carles, R ;

Bedel, E ;

Fontaine, C ;

Claverie, A ;

Benassayag, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2929-2933

[8] Study of As precipitates in LEC SI-GaAs wafer by Raman probe [J].

Zhang, FY ;

Tu, HL ;

Wang, YH ;

Qian, JY ;

Wang, HT ;

Wang, J ;

Song, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :139-142

← 1 →