Intersubband optical absorption in GaAs parabolic quantum well due to scattering by ionized impurity centers, acoustical and optical phonons

被引：0
作者：
Gevorgyan, A. H. [1 ]
Mamikonyan, N. E. [2 ]
Kostanyan, A. A. [1 ]
Kazaryan, E. M. [1 ,2 ]
机构：
[1] Russian Armenian Univ, H Emin 123, Yerevan 0051, Armenia
[2] Yerevan State Univ, A Manoogian 1, Yerevan 0025, Armenia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2018年 / 103卷
关键词：
Quantum well; Intersubband transitions; Phonon scattering; Absorption linewidth; INTERFACE ROUGHNESS; ALLOY-DISORDER; TRANSITIONS; LINEWIDTH; TEMPERATURE; LAYERS; DOT;
D O I：
10.1016/j.physe.2018.06.004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The intersubband absorption linewidth dependence on well width in GaAs quantum well is calculated. Three mechanisms of scattering have been discussed there: carriers scattering by optical (LO), acoustic (LA) phonons and ionized impurity centers (ION). The method which used for calculations is similar to a well-known method of calculating transport mobility. The estimation for absorption coefficient is proposed, based on two-dimensional dynamical conductivity expression. The LO phonon emission process is activated starting from some quantum well (QW) width so it has its impact on absorption linewidth.
引用
收藏
页码：246 / 251
页数：6
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