3D numerical modelling of microwave heating of SiC susceptor

被引：83

作者：

Tamang, S. ^{[1
]}

Aravindan, S. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Mech Engn, New Delhi 110016, India

来源：

APPLIED THERMAL ENGINEERING | 2019年 / 162卷

关键词：

SiC; Modelling; Simulation; Susceptor; Microwave; COMPOSITES; POWDER; COPPER; BEHAVIOR;

D O I：

10.1016/j.applthermaleng.2019.114250

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Microwave processing has been gaining popularity owing to its energy saving characteristics which is majorly assisted by using susceptors like SiC. It is imperative to simulate the heating of SiC susceptor to understand its role in the microwave heating process. In this work, finite element simulations are used to predict and analyse microwave heating of SiC cylinders. The effects of varying microwave power and dimension of SiC on heating of SiC are investigated. The value of temperature of SiC observed through COMSOL simulation is validated with experimental results.

引用

页数：9

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