Effect of magnetic field on the RF performance of millimeter-wave IMPATT source

被引：9
作者：
Banerjee, Partha [1 ]
Acharyya, Aritra [2 ]
Biswas, Arindam [3 ]
Bhattacharjee, A. K. [4 ]
机构：
[1] Techno India, Dept Elect & Commun, Kolkata 700091, India
[2] Supreme Knowledge Fdn Grp Inst, Dept Elect & Commun, Hooghly 712139, W Bengal, India
[3] NFET, Dept Elect & Commun, NSHM Knowledge Campus, Durgapur 713212, W Bengal, India
[4] Natl Inst Technol, Dept Elect & Commun, Durgapur 713209, W Bengal, India
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2016年 / 15卷 / 01期
关键词：
DDR IMPATT; Frequency tuning; Magnetic field; MAGTATT; Sensitivity; MICROWAVE-OPTICAL INTERACTIONS; DIMENSIONAL NUMERICAL-ANALYSIS; AVALANCHE-DIODE; SILICON; ELECTRON; OSCILLATORS; INJECTION; DEVICES; HOLE;
D O I：
10.1007/s10825-015-0770-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a two-dimensional (2-D) large-signal model has been presented to study the effect of steady magnetic field on the RF performance of millimeter-wave (mm-wave) double-drift region impact avalanche transit time device. Magnetic field sensitivities of various static and large-signal parameters of the device designed to operate at W-band have been calculated and discussed in detail. Results show that the frequency tuning of the source of around 3.64 GHz is achievable with maximum sensitivity of about 1.59 GHz for the application of transverse magnetic field varying from 4.0 to 5.0 T. The nature of both frequency and power tuning of the device due to application of transverse magnetic field is in good agreement with the experimental results carried out earlier.
引用
收藏
页码：210 / 221
页数：12
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