8.9-Megapixel Video Image Sensor With 14-b Column-Parallel SA-ADC

被引:68
作者
Matsuo, Shinichiro [1 ]
Bales, Timothy J.
Shoda, Masahiro [1 ]
Osawa, Shinji [1 ]
Kawamura, Katsuyuki [1 ]
Andersson, Anders [1 ]
Haque, Munirul [1 ]
Honda, Hidenari [1 ]
Almond, Bryan
Mo, Yaowu [2 ]
Gleason, Jeffrey [2 ]
Chow, Tony [2 ]
Takayanagi, Isao [1 ]
机构
[1] Aptina Japan LLC, Tokyo 1080023, Japan
[2] Aptina LLC, San Jose, CA 95134 USA
关键词
CMOS image sensors; column-parallel processing; digital column processor; high resolution; high sensitivity; low readout noise; low structural noise; successive approximation analog-to-digital converter (SA-ADC); HIGH-SPEED; CMOS; CAMERA;
D O I
10.1109/TED.2009.2030649
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An 8.9-megapixel 60-frames/s video image sensor with a 14-b column-parallel analog-to-digital converter (ADC) has been developed. A gain amplifier, a 14-b successive approximation ADC (SA-ADC), and a new column digital processor are employed in each column. The SA-ADC has sufficient operation speed to convert the pixel reset and the pixel signal into digital data in a row operation cycle. The column digital processor receives bit serial data from the SA-ADC output and performs subtraction of the reset data from the signal data in order to reduce column fixed pattern noise (FPN). Column FPN is successfully reduced to 0.36 e(rms)(-) by this digital-domain column FPN correction. Low-voltage low-power serial video interface and noise decoupling on pixel drive voltages contribute to row-temporal-noise reduction to 0.31 e (-)(rms). Both column FPN and row temporal noise are not visible in spite of a low readout noise floor of 2.8 e(rms)(-).
引用
收藏
页码:2380 / 2389
页数:10
相关论文
共 21 条
[1]  
CLINE D, 1995, THESIS UC BERKELEY B
[2]   HIGH-RESOLUTION A-D CONVERSION IN MOS-LSI [J].
FOTOUHI, B ;
HODGES, DA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (06) :920-926
[3]   A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters [J].
Furuta, Masanori ;
Nishikawa, Yukinari ;
Kawahito, Shoji .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (04) :766-774
[4]   A 0.6 μm CMOS pinned photodiode color imager technology [J].
Guidash, RM ;
Lee, TH ;
Lee, PPK ;
Sackett, DH ;
Drowley, CI ;
Swenson, MS ;
Arbaugh, L ;
Hollstein, R ;
Shapiro, F ;
Domer, S .
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :927-929
[5]  
KAWAHITO S, 2008, P IEEE ISSCC FEB, P56
[6]  
KRYMSKI A, 2003, P IEEE WORKSH CCD AD, P1
[7]  
Krymski A., 2006, IEEE ISSCC Dig. Tech, P2040
[8]   A high-speed, 240-frames/s, 4.1-mpixel CMOS sensor [J].
Krymski, AI ;
Bock, NE ;
Tu, NR ;
Van Blerkom, D ;
Fossum, ER .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :130-135
[9]   A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters [J].
Mase, M ;
Kawahito, S ;
Sasaki, M ;
Wakamori, Y ;
Furuta, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (12) :2787-2795
[10]   Experimental ultrahigh-definition color camera system with three 8M-pixel CCDs [J].
Mitani, K ;
Sugawara, M ;
Okano, F .
SMPTE JOURNAL, 2002, 111 (04) :148-153