Dependence of GaN HEMT Millimeter-Wave Performance on Temperature

被引：64

作者：

Darwish, Ali M. ^{[1
]}

Huebschman, Benjamin D. ^{[2
]}

Viveiros, Edward ^{[2
]}

Hung, H. Alfred ^{[2
]}

机构：

[1] Amer Univ Cairo, New Cairo 11835, Egypt

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2009年 / 57卷 / 12期

关键词：

Aluminum-gallium-nitride (AlGaN); gallium-nitride (GaN); high electron-mobility transistor (HEMT); millimeter wave; reliability; thermal resistance; wide bandgap; ALGAN/GAN HEMT; POWER; TRANSISTORS; VELOCITY;

D O I：

10.1109/TMTT.2009.2034050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents extensive thermal characterization of recently fabricated high-performance millimeter-wave GaN/SiC devices from four sources across temperature (-25 degrees C to +125 degrees C). The changes with temperature for: output power at millimeter-wave frequencies (P(out)), pinchoff voltage (V(p)), knee-voltage (V(k)), onresistance (R(on)), power-added efficiency (PAE), saturated drain current (I(dss)), power gain (G), and transconductance (g(m)) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for P(out), V(p), V(k), R(on), PAE, I(dss), G, and g(m) in GaN technology. The main findings are: 1) P(out)'s temperature dependence can be negative or positive, opposite of G's and I(dss)'s strong negative temperature dependence, and 2) the pinchoff voltage's dependence on temperature is very weak. The results obtained provide monolithic microwave integrated circuit designers with key information required for meeting performance over a wide temperature range.

引用

页码：3205 / 3211

页数：7

共 15 条

[1]

Aaen P.H., 2007, MODELING CHARACTERIZ

[2] High temperature operation of AlGaN/GaN HEMT [J].

Adachi, N ;

Tateno, Y ;

Mizuno, S ;

Kawano, A ;

Nikaido, J ;

Sano, S .

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, :507-510

[3]

Ahmed A, 2001, IEEE MTT S INT MICR

[4] Evaluation of effective electron velocity in AlGaN/GaN HEMTs [J].

Akita, M ;

Kishimoto, S ;

Maezawa, K ;

Mizutani, T .

ELECTRONICS LETTERS, 2000, 36 (20) :1736-1737

[5]

Darwish A.M., 2009, IEEE INT MICR S BOST

[6] Thermal resistance calculation of AlGaN-GaN devices [J].

Darwish, AM ;

Bayba, AJ ;

Hung, HA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (11) :2611-2620

[7]

DARWISH AM, 2005, P IEEE COMP SEM IC S

[8] THE EFFECT OF TEMPERATURE ON LATERAL DMOS TRANSISTORS IN A POWER IC TECHNOLOGY [J].

DOLNY, GM ;

NOSTRAND, GE ;

HILL, KE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :990-995

[9]

FOUTZ BE, 2000, THESIS CORNELL U ITH

[10] On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT [J].

Oxley, CH ;

Uren, MJ ;

Coates, A ;

Hayes, DG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :565-567

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