Theoretical scanning tunneling microscopy images of the As vacancy on the GaAs(110) surface - Comment

被引：8

作者：

Harper, J ^{[1
]}

Lengel, G ^{[1
]}

Allen, RE ^{[1
]}

Weimer, M ^{[1
]}

机构：

[1] LAB PHYS SCI, COLLEGE PK, MD 20740 USA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.79.3314

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3314 / 3314

页数：1

共 6 条

[1] CHARGE-STATE-DEPENDENT STRUCTURAL RELAXATION AROUND ANION VACANCIES ON INP(110) AND GAP(110) SURFACES [J].

EBERT, P ;

URBAN, K ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1994, 72 (06) :840-843

[2] Theoretical scanning tunneling microscopy images of the as vacancy on the GaAs(110) surface [J].

Kim, H ;

Chelikowsky, JR .

PHYSICAL REVIEW LETTERS, 1996, 77 (06) :1063-1066

[3] GEOMETRY AND ELECTRONIC-STRUCTURE OF THE ARSENIC VACANCY ON GAAS(110) [J].

LENGEL, G ;

WILKINS, R ;

BROWN, G ;

WEIMER, M ;

GRYKO, J ;

ALLEN, RE .

PHYSICAL REVIEW LETTERS, 1994, 72 (06) :836-839

[4] Charge injection and STM-induced vacancy migration on GaAs(110) [J].

Lengel, G ;

Harper, J ;

Weimer, M .

PHYSICAL REVIEW LETTERS, 1996, 76 (25) :4725-4728

[5] STABILITY AND DYNAMICS OF SURFACE VACANCIES ON GAAS(110) [J].

YI, JY ;

HA, JS ;

PARK, SJ ;

LEE, EH .

PHYSICAL REVIEW B, 1995, 51 (16) :11198-11200

[6] Structure of the As vacancies on GaAs(110) surfaces [J].

Zhang, SB ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 1996, 77 (01) :119-122

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