Radiation hardness of MSM biasing structures for GaAs microstrip detectors

被引：2

作者：

Rente, C

Arbabi, S

Braunschweig, W

Breibach, J

Chu, Z

Karpinski, W

Krais, R

Kubicki, T

Lubelsmeyer, K

Schoentag, M

Siedling, R

Syben, O

Tenbusch, F

Toporowski, M

Wittmer, B

Xiao, WJ

机构：

[1] I. Physikalisches Institut, RWTH Aachen

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 388卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(96)01262-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to achieve a high signal-to-noise ratio and a low-space consumption it is necessary to use integrated resistors for the biasing of GaAs microstrip detectors used in high-energy physics experiments (e.g. CMS, H1). Metal-semiconductor-metal (MSM) structures operating in the reach through regime seem to be a promising solution for that purpose. According to the requirements on radiation hardness of strip detectors to be used in the CMS experiment, we have irradiated MSM biasing structures with up to 4.6 x 10(14) neutrons/cm(2). The radiation effects on the dc and noise characteristics of the devices are investigated. Furthermore, the effects of an annealing procedure are examined.

引用

页码：390 / 394

页数：5

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