共 66 条
Band Gap Engineering in Cs2(NaxAg1-x)BiCl6 Double Perovskite Nanocrystals
被引:125
作者:

Larnba, Raman Singh
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Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India

Basera, Pooja
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Indian Inst Technol Delhi, Dept Phys, Hauz Khas, New Delhi 110016, India Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India

Bhattacharya, Saswata
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Indian Inst Technol Delhi, Dept Phys, Hauz Khas, New Delhi 110016, India Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India

Sapra, Sameer
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Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India
机构:
[1] Indian Inst Technol Delhi, Dept Chem, Hauz Khas, New Delhi 110016, India
[2] Indian Inst Technol Delhi, Dept Phys, Hauz Khas, New Delhi 110016, India
关键词:
HALIDE DOUBLE PEROVSKITE;
LEAD-FREE;
ANION-EXCHANGE;
THIN-FILMS;
LIGHT;
BR;
EFFICIENCY;
CL;
TRANSITIONS;
MOBILITIES;
D O I:
10.1021/acs.jpclett.9b02168
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Lead-free double perovskite materials, A(2)M(I)M'(III)X-6, have recently attracted attention as environment-friendly alternatives to lead-based perovskites, APbX(3), because of both rich fundamental science and potential applications. We report band gap tuning via alloying of Cs2AgBiCl6 nanocrystals (NCs) with nontoxic, abundant Na. It results in a series of Cs-2(NaxAg1-x)BiCl6 (x = 0, 0.25, 0.5, 0.75, and 1) double perovskite NCs, leading to increase in optical band gap from 3.39 eV (x = 0) to 3.82 eV (x = 1) and 30-fold increment in weak photoluminescence. The tuning of band gap has been further explored by electronic structure calculation under the framework of density functional theory (DFT). The latter confirms that the increase in band gap is due to reduction of Ag contribution near valence band maxima (VBM) on incorporation of Na ion in place of Ag. These alloyed double perovskites can have useful potential applications in optoelectronic devices.
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页码:5173 / 5181
页数:17
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