InGaP/Ge and GaAs/Ge Double-Junction Solar Cells for Thermal-CPV Hybrid Energy Systems

被引：0

作者：

Bouzazi, Boussairi ^{[1
]}

Jaouad, Abdelatif ^{[1
]}

Turala, Artur ^{[1
]}

Ares, Richard ^{[1
]}

Fafard, Simon ^{[1
]}

Aimez, Vincent ^{[1
]}

机构：

[1] CNRS, 3IT, LN2, UMI 3463, 3000 Blvd Univ, Sherbrooke, PQ J1K OA5, Canada

来源：

14TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-14) | 2018年 / 2012卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.5053549

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We demonstrate the feasibility approach to deploy two types of dual junction GaInP/Ge and GaAs/Ge solar cells in a hybrid photovoltaic-solar thermal concentrator system, where they can operate at 250 degrees C and at medium light concentration. These devices were designed to transfer absorbed heat to tube with a fluid, using high thermal conductivity of Ge substrate. Both heterostructures showed no significant degradation after a high temperature thermal storage of over 7 months long. Regarding their performance, the GaAs/Ge dual junction showed similar to 1% higher absolute efficiency than the InGaP/Ge, at 250 degrees C and 170 suns.

引用

页数：6

共 7 条

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