Time-Resolved Spectroscopy of Epitaxial InP Nanowires

被引：0

作者：

Crankshaw, S. ^{[1
]}

Reitzenstein, S.

Chuang, L.

Moewe, M.

Muench, S.

Hofman, C.

Lam, M.

Forchel, A.

Chang-Hasnain, C.

机构：

[1] Univ Calif Berkeley, Appl Sci & Technol Grp, Berkeley, CA 94720 USA

来源：

2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report time-resolved photoluminescence measurements on epitaxial (111) InP nanowires up to 110 K. The observed decay times increase with longer emission wavelengths, indicating the importance of surface effects on narrow InP wires. (C)2007 Optical Society of America

引用

页码：1445 / +

页数：2